The latest Breakthrough of FAW Hongqi

Updated : 2024-11-05Source : Changchun News
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Recently, the first 1700V ultra-high voltage silicon carbide power device sample designed by the Power Electronics Development Department of the New Energy Development Institute of China FAW Research and Development General Institute was successfully developed. Related products and technologies can help electric vehicle replenishment systems upgrade to ultra-high voltage platforms, greatly reducing charging time.

The ultra-high voltage power device is equipped with domestic advanced 1700V car-gauge level ultra-high voltage silicon carbide chip, innovative use of high dielectric strength packaging materials, high voltage packaging structure and other technologies, after testing, the highest bus voltage of the device can reach 1200V. At the same time, the UHV power device combined with high density cell parallel and short channel cell structure design, high pass flow copper clip interconnection and high temperature silver sintering process and other advanced technologies can give full play to the comprehensive performance advantages of low loss and high current output on the UHV platform, effectively improve the power density and efficiency of the power system, and can operate stably and efficiently under high pressure and high temperature. Ensure the user's driving power experience, save the vehicle power consumption to the greatest extent, and improve the driving range.

According to reports, the successful development of this technology will effectively address users' concerns about charging anxiety and range anxiety while driving. It enriches FAW Hongqi's reserve of forward-looking technologies and lays a solid foundation for future Hongqi products to adapt to high-voltage architectures above 'kilovolt' levels and achieve rapid energy replenishment in 5 minutes."




Source: Changchun News  Editor: QI Ji